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SPI80N08S2-07R OptiMOS(R) Power-Transistor Feature * N-Channel Product Summary VDS R DS(on) ID 75 7.3 80 P- TO262 -3-1 V m A * Enhancement mode * 175C operating temperature * Avalanche rated * dv/dt rated * Integrated gate resistance for easy parallel connection Type SPI80N08S2-07R Package P- TO262 -3-1 Ordering Code Q67060-S7417 Marking RN0807 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current 1) TC=25C Symbol ID Value 80 80 Unit A Pulsed drain current TC=25C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 750 30 6 20 300 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25 Repetitive avalanche energy, limited by Tjmax 2) Reverse diode dv/dt IS=80A, VDS=60V, di/dt=200A/s, T jmax=175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPI80N08S2-07R Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.32 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 75 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = V DS ID=250A Zero gate voltage drain current V DS=75V, VGS=0V, Tj=25C V DS=75V, VGS=0V, Tj=125C A 0.01 1 1 6.1 1 100 100 7.3 nA m Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=80A 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 133A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPI80N08S2-07R Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =60V, ID =80A, VGS =0 to 10V VDD =60V, ID =80A Symbol Conditions min. Values typ. 104 4380 970 390 7 24 87 117 86 max. - Unit gfs Ciss Coss Crss RG td(on) tr td(off) tf VDS 2*ID *RDS(on)max, ID =80A VGS =0V, VDS =25V, f=1MHz 52 5.6 - S 5830 pF 1290 590 8.4 36 130 175 129 ns VDD =40V, VGS =10V, ID =80A, RG =2.4 - 21 61 138 4.7 28 92 185 - nC V(plateau) VDD =60V, ID =80A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF =80A VR =40V, IF =lS , diF /dt=100A/s IS TC=25C - 0.9 76 224 80 320 1.3 95 280 A V ns nC Page 3 2003-05-09 SPI80N08S2-07R 1 Power dissipation Ptot = f (TC) parameter: VGS 6 V 320 SPI80N08S2-07R 2 Drain current ID = f (T C) parameter: VGS 10 V 90 SPI80N08S2-07R W A 70 240 P tot 60 200 ID 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 C 190 160 120 80 40 0 0 20 40 60 80 100 120 140 160 C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 C 10 3 SPI80N08S2-07R 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPI80N08S2-07R K/W A t = 27.0s p 10 0 /I D ID R DS (on ) = V 10 DS 2 Z thJC 100 s 10 -1 10 1 ms -2 D = 0.50 0.20 -3 10 1 10 0.10 0.05 0.02 10 -4 single pulse 0.01 10 0 10 -1 10 0 10 1 V 10 2 10 -5 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-05-09 SPI80N08S2-07R 5 Typ. output characteristic ID = f (V DS); T j=25C parameter: tp = 80 s 190 SPI80N08S2-07R 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS 24 SPI80N08S2-07R Ptot = 300W i VGS [V] a b 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 10.0 A 160 140 20 c d e f g h c hd R DS(on) 18 16 14 12 10 8 ID 120 100 80 60 40 c e d g e f g h fi 6 4 VGS [V] = i 20 a b 2 c 4.4 d 4.6 e 4.8 f 5.0 g 5.2 h i 5.4 10.0 0 0 1 2 3 4 5 V 0 6.5 0 20 40 60 80 100 120 A 150 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS 2 x ID x RDS(on)max parameter: tp = 80 s 160 8 Typ. forward transconductance g fs = f(I D); T j=25C parameter: g fs 120 A S 120 100 80 g fs V VGS ID 80 60 60 40 40 20 20 0 0 1 2 3 4 0 6 0 20 40 60 80 100 A ID 140 Page 5 2003-05-09 SPI80N08S2-07R 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 80 A, VGS = 10 V SPI80N08S2-07R 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS 3.5 30 V 24 1.25 mA V GS(th) 3 R DS(on) 22 20 18 16 14 12 10 8 6 4 2 0 -60 -20 20 60 100 140 C 200 typ 98% 2.75 250 A 2.5 2.25 2 1.75 1.5 -60 -20 20 60 100 C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 s 10 3 SPI80N08S2-07R Ciss pF A 10 2 Coss 10 3 Crss IF 10 1 C T j = 25 C typ T j = 175 C typ T j = 25 C (98%) T j = 175 C (98%) 10 2 10 5 10 15 20 0 0 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 V DS VSD Page 6 2003-05-09 SPI80N08S2-07R 13 Typ. avalanche energy E AS = f (T j) par.: I D = 80 A , V DD = 25 V, R GS = 25 800 14 Typ. gate charge VGS = f (QGate) parameter: ID = 80 A pulsed 16 SPI80N08S2-07R mJ V 600 12 E AS VGS 500 10 0,2 VDS max 0,8 VDS max 400 8 300 6 200 4 100 2 0 25 45 65 85 105 125 145 C 185 Tj 0 0 20 40 60 80 100 120 140 160 nC 200 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 92 SPI80N08S2-07R V 88 V(BR)DSS 86 84 82 80 78 76 74 72 70 68 -60 -20 20 60 100 140 C 200 Tj Page 7 2003-05-09 SPI80N08S2-07R Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPI80N08S2-07R, for simplicity the device is referred to by the term SPI80N08S2-07R throughout this documentation. Page 8 2003-05-09 |
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